Wafer Bonder, SB6e

Instrument:

SUSS Microsystems SB6efor anodic and BCB bonding

Contact:

Sigurd.Moe@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers

  • Si/SiO2/SixNy
  • Al/W/Ti
  • Glass (with exceptions)
  • Noble metals (with exceptions)

Technology Description:

Wafers to be bonded are loaded on a fixture, only separated by 100µm thick capton spacers. The wafers can be loaded on the fixture in the MA6/BA6 bond aligner, or just placed manually. In the bonding chamber the wafers are brought to contact in the centre under controlled atmosphere and temperature.

Technical Information:

Typical temperature for anodic bonding: 300-450oC

Typical temperature for BCB bonding: 250oC

Controlled atmosphere: Vacuum, N, Ar