Ion implanter

Instrument:

Ion implanter

Contact:

Viktor Bobal

Technology Description:

Material Class:

Vacuumcompatible solids, up to 4" wafers

Technology Description:

 

Ion implantation is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research. The ions introduce both a chemical change in the target, in that they can be a different element than the target or induce a nuclear transmutation, and a structural change, in that the crystal structure of the target can be damaged or even destroyed by the energetic collision cascades.

Technical Information:

NEC Tandem accelerator

Available elements for implantation: H,D,Li,B,C,N,Mg,Al,Si,P,Fe,Ag,Ni,Cr,Ge

Terminal Voltage: 1MV

Energies available: 0.036 MeV (fixed), 400keV – 2MeV

 

Technical Information:

Category: Other processes Area name: Clean Room Room area: 440 Model: Tandem Accelerator Manufacturer: NEC