Mask Aligners MA150e

Instrument:

 Two SUSS Microtec MA150e full-field proximity aligners

Contact:

 Lars.G.W.Tvedt@sintef.no
Lars.Breivik@sintef.no

Booking:

 MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers with primary flat

  • Si/SiO2/SixNy
  • Al/W/Ti

Technology Description:

Maskaligners are used in photolithography to transfer a pattern on a photomask to a photoresist on a wafer. This photoresist can then serve as e.g. an etch mask to transfer the pattern into the wafer. The photoresist can also be removed after metal deposition, leaving a metal pattern on the wafer (lift-off).

Technical Information:

Contact Resolution: Pending on process,  but resolution below 1 μm can be obtained.
Exposure modes: Proximity, Soft/Hard Contact, Vacuum Contact, Soft Vacuum Contact.
Soft and hard contact exposures give a resolution of 1-3 µm. Vacuum contact exposure gives higher resolution (typically down to 0.8-0.9 µm) but shortens the mask lifetime, whereas proximity exposures give lower resolution but less wear on the mask.

  • For broadband and deep UV photolithography (250 nm)
  • Top side alignment (TSA accuracy ± 1 μm)
  • Back side alignment (BSA accuracy ± 1.5 μm)
  • Süss diffraction reducing optics implemented on both aligners
  • Large gap exposure for lithography on wafers with topography (~100 μm)
  • For large batches there is also the possibility for auto alignment of wafers (PatMax search algorithm)
  • Double sided handling