Rapid thermal processing

Instrument:

Annealsys AS-Master 2000 RTP

Contact:

Lars.Breivik@sintef.no
Mads.Blyberg@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers

  • Si/SiO2/SixNy
  • Al/W/Ti

Technology Description:

Typical applications would be repair of crystal damage after implantation (while minimizing the redistribution of doping atoms) and annealing of silicon-metal systems. Cold wall chamber technology provides high process reproducibility in an ultra clean and contamination free environment. Single wafer processing and ten independent heating zones provides excellent process  uniformity.

Technical Information:

Maximum temperature: 1250oC
Maximum power: 90kW
Ramp rate: Up to 200 oC/s