LPCVD of Si3N4 and polySi

Instrument:

 Centrotherm Diffusion furnace E 1550 HT 260-4

Contact:

 Lars.Breivik@sintef.no

Booking:

 MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm silicon substrates only

  • Si/SiO2/SixNy

Technology Description:

Thin film deposition by LPCVD (Low Pressure Chemical Vapour Deposition).

Technical Information:

2 LPCVD furnaces available for stoichiometric siliconnitride (Si3N4) deposition and polysilicon deposition respectively.Semi automatic loading system.
Main gaslines: SiH2Cl2, NH3 (nitride deposition) and SiH4 (polysilicon). HCl available in the polysilicon tube in order to enable etching of native oxide.
Silicon nitride thickness range: 20 nm to 150 nm
Polysilicon thickness range: 50 nm to 1000 nm
Thickness uniformity: ±5%.