Instrument: |
Centrotherm Diffusion furnace E 1550 HT 260-4 |
Contact: |
Lars.Breivik@sintef.no |
Booking: |
MiNaLab@sintef.no |
Sample Specifications: |
100 mm and 150 mm Si wafers only
|
Technology Description: |
Two gas phase deposition furnaces available for boron (p-type) and phosphorous (n-type) doping respectively. |
Technical Information: |
Doping of:boron (p-type) and phosphorous (n-type) Main gaslines: O2, N2, BBr3 (boron deposition) and POCl3 (phosphorous deposition) Loading system: semi automatic |
