Gas phase doping

Instrument:

 Centrotherm Diffusion furnace E 1550 HT 260-4

Contact:

 Lars.Breivik@sintef.no

Booking:

 MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers only

  • Si/SiO2/SixNy

Technology Description:

Two gas phase deposition furnaces available for boron (p-type) and phosphorous (n-type) doping respectively.

Technical Information:

Doping of:boron (p-type) and phosphorous (n-type)

Main gaslines: O2, N2, BBr3 (boron deposition) and POCl3 (phosphorous deposition)

Loading system: semi automatic