Diffusion Furnaces

Instrument:

 Centrotherm Diffusion Furnace E 1550 HT 260-4 (horizontal furnace)

Contact:

 Lars.Breivik@sintef.no

Booking:

 MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers only

  • Si/SiO2/SixNy

Technology Description:

8 diffusion furnaces available for anneal, dry oxidation and wet oxidation at atmospheric pressure.

Technical Information:

7 quartz tubes and one SiC tube

Loading system: Semi automatic

Temperature:

  • for the quartz tubes generally 700 oC – 1050 oC
  • up to 1250 oC available in the SiC tube.

Main gaslines:

  • O2, H2, N2 and DCE (dichloroethylen)
  • HCl available in the SiC tube (By having chlorine present during oxidation the oxide quality can be improved.)

Oxide thickness range: 20 nm to 3000 nm

Thickness uniformity: ±3%.