Reactive Ion Etch (RIE) tool 3

Instrument:

Alcatel Micro Machining Systems (AMMS)
AMS200 SE I-Productivity ("IPROD") with electrostatic chuck

Contact:

Geir.U.Jensen@sintef.no
Anand.Summanwar@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si substrates

  • Si/SiO2/SixNy
  • Al/W/Ti

Technology Description:

A stand-alone, single wafer etcher with one reactor, equipped with a cassette-to-cassette system with automatic robot handling. The reactor has a decoupled, high density ICP plasma source. It is designed specially for deep reactive ion etching (DRIE) and high aspect ratio etching of silicon using the Bosch (switched) process. On this tooI only, there is an option of using pulsed low frequency (LF) substrate biasing which can help to minimize the notching phenomenon when stopping on a dielectric layer. It is also used for (continuous) RIE etch processes such as etching of dielectric materials like SiO2 and Si3N4, and organic materials, as well as shallow, very accurate etching of Si.

Technical Information:

Etches: Thin films of SiO2 , SixNy , Si and DRIE of SiSubstrate clamping type: ElectrostaticSubstrate thickness range:

  • 100 mm wafers: 200-2000 µm
  • 150 mm wafers: 300-2000 µm

Wafer edge masking:Non-contact ceramic edge masks are available for 100 mm & 150 mm wafers, but is used only when required

Wafer edge exclusion zone:

  • 100 mm wafers: 5 mm
  • 150 mm wafers: 8 mm

Maximum usable plasma source power: 2.8 kW (13.56 MHz RF)

Maximum usable substrate bias power: 280 W (13.56 MHz RF) or 200 W (LF at 200 kHz-460 kHz, Pulsed/Non-pulsed)

Process gases available: SF6 , C4F8, O2, N2, Ar

Process pressure: Up to 20 Pa

Substrate holder temperature range: -10 °C to +45 °C