Instrument: |
Alcatel Micro Machining Systems (AMMS)AMS200 SE I-Speeder ("Oldboy") with mechanical chuck |
Contact: |
Geir.U.Jensen@sintef.no
Anand.Summanwar@sintef.no |
Booking: |
MiNaLab@sintef.no |
Sample Specifications: |
100 mm and 150 mm Si substrates
|
Technology Description: |
This dry etching tool is a stand-alone, single wafer etcher with one reactor. It is equipped with a cassette-to-cassette system with automatic robot handling. The reactor has a decoupled, high density ICP plasma source. It is designed specially for deep reactive ion etching (DRIE) and high aspect ratio etching of silicon using the Bosch (switched) process. It is also possible to perform (continuous) RIE etch processes such as etching of dielectric materials like SiO2 and Si3N4, and organic materials. |
Technical Information: |
Etches: Thin films of SiO2, SixNy, Si and DRIE of SiSubstrate clamping type: Mechanical Substrate thickness range:
Clamping rings: Aluminium & ceramic clamping rings with varying amounts of wafer edge overlap are available for both 100 mm & 150 mm wafers Wafer edge exclusion zone:
Maximum usable plasma source power: 2.8 kW (13.56 MHz RF) Maximum usable substrate bias power: 280 W (13.56 MHz RF) Process gases available: SF6 ,C4F8, O2, CH4 Process pressure: Up to 20 Pa Substrate holder temperature range: -10 °C to +45 °C |
