Reactive Ion Etch (RIE) tool 2

Instrument:

Alcatel Micro Machining Systems (AMMS)AMS200 SE I-Speeder ("Oldboy") with mechanical chuck

Contact:

Geir.U.Jensen@sintef.no
Anand.Summanwar@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si substrates

  • Si/SiO2/SixNy
  • Al/W/Ti

Technology Description:

This dry etching tool is a stand-alone, single wafer etcher with one reactor. It is equipped with a cassette-to-cassette system with automatic robot handling. The reactor has a decoupled, high density ICP plasma source. It is designed specially for deep reactive ion etching (DRIE) and high aspect ratio etching of silicon using the Bosch (switched) process. It is also possible to perform (continuous) RIE etch processes such as etching of dielectric materials like SiO2 and Si3N4, and organic materials.

Technical Information:

Etches: Thin films of SiO2, SixNy, Si and DRIE of SiSubstrate clamping type: Mechanical

Substrate thickness range:

  • 100 mm wafers: 200-2000 µm
  • 150 mm wafers: 300-2000 µm

Clamping rings: Aluminium & ceramic clamping rings with varying amounts of wafer edge overlap are available for both 100 mm & 150 mm wafers

Wafer edge exclusion zone:

  • 100 mm wafers: 5 mm
  • 150 mm wafers: 8 mm

Maximum usable plasma source power: 2.8 kW (13.56 MHz RF)

Maximum usable substrate bias power: 280 W (13.56 MHz RF)

Process gases available: SF6 ,C4F8, O2, CH4

Process pressure: Up to 20 Pa

Substrate holder temperature range: -10 °C to +45 °C