Reactive Ion Etch (RIE) tool 1

Instrument:

Alcatel Micro Machining Systems (AMMS)
AMS200 SE I-Speeder ("Dirty Harry")

Contact:

Geir.U.Jensen@sintef.no
Anand.Summanwar@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si substrates

  • Si/SiO2/SixNy
  • Al/W/Ti
  • Glass (with exceptions)
  • Polymers (with exceptions)
  • Noble metals (with exceptions)

Technology Description:

A stand-alone, single wafer etcher with one reactor and a manual wafer loading system. The reactor has a decoupled, high density ICP plasma source. It is designed specially for deep reactive ion etching (DRIE) and high aspect ratio etching of silicon using the Bosch (switched) process. On this tool, the chuck is cooled using a flow of liquid N2. This makes it possible to keep the substrate at very low temperatures during processing and use so-called cryogenic silicon etch process using SF6 and O2 gases. The normal operation mode is still the Bosch process. In addition, it is also possible to perform (continuous) RIE etch processes such as etching of dielectric materials like SiO2 and Si3N4, some metals (e.g. Pt), and organic materials.

Technical Information:

Etches: Thin films of SiO2, SixNy ,Si, Pt and DRIE of SiSubstrate clamping type: Electrostatic

Substrate thickness range:

  • 100 mm wafers: 200-2000 µm
  • 150 mm wafers: 300-2000 µm

Wafer edge masking: Non-contact aluminium edge masks are available for 100 mm & 150 mm wafers

Wafer edge exclusion zone:

  • 100 mm wafers: 5 mm
  • 150 mm wafers: 8 mm

Maximum usable plasma source power: 2.5 kW (13.56 MHz RF)

Maximum usable substrate bias power: 200 W (13.56 MHz RF)

Process gases available: SF6 ,C4F8, O2

Process pressure: Up to 20 Pa

Substrate holder temperature range: -120 °C (only for cryogenic operation) up to +45 °C