Technology Description: |
| Instrument model: | Flextura Gate 3 (Remote Plasma chamber). Gate 3 is part of the Flextura cluster that have one load-lock (typical 15 minutes pump-down time), one transfer chamber, two growth chambers, one post-growth annealing chamber (all with base pressures in the range of 10-8 - 10-9 mBar) and one analytical chamber (with base pressure in the range 10-10 - 10-9 mBar). A robotic arm allow for sample handling between the different chambers and thus allow for growth, post-growth annealing and surface-sensitive analysis, all in-situ. | | Technology Description: | Magnetron sputtering is a technique which can be used for thin film deposition with a wide range of materials – in principle any solid metal or alloy and a variety of compounds. Sputtering is the removal of atomized material from a solid due to energetic bombardment of its surface layers by ions or neutral particles. The Flextura Gate 3 offers co-deposition of four targets, and multilayer films without breaking vacuum. The plasma is generated remotely, a state-of-the-art feature, that allows for independent control of the ion density (plasma source) and ion energy (target bias). Sample bias, automatic target- and sample Z-position are also available. The Flextura Gate 3 is intended for high quality epitaxial processes and is now dedicated for high-purity Ga2O3 growth. | | Technical Information: | Sources: 1 DC, 2 RF and 1 HiPIMS/DC Target size: 2 x 3” and 2 x 2” Substrate size: 4” Single wafer chamber, but smaller samples can be mounted on the sample holder. Substrate heating: 20 ºC - 1000 ºC Gas: Ar, N2, O2 and H2 Materials: Ga2O3. | |
