Sputter for Al Ti TiN and W

Instrument:

MRC643, batch sputter deposition

Contact:

Erik.Poppe@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers, different chips depending on mounting

  • Si/SiO2/SixNy
  • Al/W/Ti

Technology Description:

The MRC643 is an ordinary sputter deposition tool, with DC magnetron configuration, or RF magnetron with limited power. The Ti target position has reactive gas possibilities for sputtering of TiN.

Technical Information:

Sputter deposition of Al, Ti, TiN(reactive) and W

  • DC magnetron and RF magnetron (only Ti)
  • Loadlock and chamber with high vacuum (cryo) pump
  • Three targets and RF etch (backsputter)
  • High throughput (typically 2 batches/hour)
  • 4x150mm or 9x100mm in one batch
  • Possibility of heating substrates with IR lamps, but limited thermal control. The palette is moving so there is no possibility of temperature measurement and limited cooling.
  • Residual gas analyzer (RGA)
  • Other targets can be installed, but materials must be “CMOS compatible”