Instrument: |
Alcatel AMS200 PECVD, single-wafer ICP-PECVD |
Contact: |
Angela.Kok@sintef.no |
Booking: |
MiNaLab@sintef.no |
Sample Specifications: |
100, 150 and 200 mm Si wafers
It is possible to deposit on different dies/parts if they can be placed on a machined Al plate of the same size as wafers. Some height restrictions apply. |
Technology Description: |
PECVD (plasma enhanced chemical vapour deposition) by ICP (inductively coupled plasma) of SiO2, Si3N4 and amorphous Si.Carrier gas like O2, N2 or Ar is let in to the ICP reactor. The ICP makes the plasma denser than ordinary PECVD and makes the dissociation of more effective, allowing lower deposition temperatures. SiH4 is used as the carrier for Si and is injected in a separate gas ring closer to the substrate. The ICP configuration allows for separate adjustment of plasma power and substrate bias. Temperature control of the wafer is by He overpressure on the back side. If there are holes in the wafer, the process uniformity and deposition quality will differ. |
Technical Information: |
Deposition of SiO2, Si3N4 and amorphous Si
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