Focused Ion Beam (FIB) microscopy


Focused Ion Beam (FIB) microscopy


Ken Roger Ervik
Ida Noddeland

Technology Description:

Focused Ion Beam (FIB) microscopy is a technique in which ions (in this case Ga-ions) are used to image and manipulate the surface of a sample. Manipulation can mean sputtering away or depositing material. Structures smaller than 100 nm can be achieved. A FIB is mostly used for the production of very small features (Nanostructuring) if electron beam lithography can not be used. It is also used to prepare very site specific samples for transmission eletron microscopy. In addition a FIB can be used for cutting cross sections into samples and investigating it immediately without exposing it to air. Doing this repeatedly enables three-dimensional reconstruction of certain features of a sample using slice-and-view software.The NanoLab FIB is a DualBeam FIB which means that in addition to the Ga-beam an electron beam can be used for imaging purposes.The attached EDAX-system allows standard X-Ray analysis.

The NanoLab FIB is placed in an electromagnetic field-free area on vibration isolated ground.

Sample Specifications:

Magnetic samples have restrictions. Samples with a high vapor pressure are not allowed. Maximum sample diameter is four inch.

Technical Information:

  • Model: FEI Helios NanoLab DualBeam FIB
  • Detectors for: seconday and back scattered electrons, EDAX EDX Detector
  • Attainable resolution (SEM): 1.2 nm (Attention: this is strongly material dependent!)
  • Acceleration Voltage (SEM and FIB): 0,5 – 30 kV

Technical Information:

Category: Characterization Area name: Characterisation Model: Helios Nanolab Manufacturer: FEI Company