Ellipsometer

Instrument:

SD 2000 Phillips

Contact:

JonOlav.Grepstad@sintef.no

Booking:

MiNaLab@sintef.no

Sample Specifications:

100 mm and 150 mm Si wafers

  • Si/SiO2/SixNy
  • Al/W/Ti
  • Glass (with exceptions)
  • Polymers (with exceptions)
  • Noble metals (with exceptions)

Technology Description:

Ellipsometry can probe the complex refractive index or dielectric function tensor, which gives access to fundamental physical parameters and is related to a variety of sample properties. It is commonly used to characterize film thickness for single layers or complex multilayer stacks ranging from a few angstroms or tenths of a nanometer to several micrometers with an excellent accuracy.

Technical Information:

  • Three lasers measuring at 633, 1313 and 1540 nm.
  • Autofocus
  • XYZ table
  • Fix angle
  • Absolute uncertainty +/- 10 Å for SiO2